STK2N80 n - channel enhancement mode power mos transistor n typical r ds(on) = 5 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low input capacitance n low gate charge n application oriented characterization applications n high current, high speed switching n switch mode power supplies (smps) n consumer and industrial lighting internal schematic diagram type v dss r ds(on) i d STK2N80 800 v < 7 w 2.1 a 1 2 3 sot-82 sot-194 (option) december 1996 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w )800v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c2.1a i d drain current (continuous) at t c = 100 o c1.3a i dm ( ) drain current (pulsed) 9.6 a p tot total dissipation at t c = 25 o c70w derating factor 0.56 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area 1 2 3 1/10
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.78 80 0.7 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 2.1 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 80 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 2.8 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 1.3 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 25 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 1 a 5 7 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 2.1 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 1 a 1.2 1.9 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 460 55 22 600 70 30 pf pf pf STK2N80 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 400 v i d = 1.5 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 38 42 50 57 ns ns (di/dt) on turn-on current slope v dd = 640 v i d = 2 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 160 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d = 2 a v gs = 10 v 31 6 14 40 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d = 2 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 70 25 108 90 32 140 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 2.1 9.6 a a v sd ( * ) forward on voltage i sd = 2.1 a v gs = 0 2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 920 18.4 40 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STK2N80 3/10
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STK2N80 4/10
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope STK2N80 5/10
switching safe operating area accidental overload area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms STK2N80 6/10
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load STK2N80 7/10
dim. mm inch min. typ. max. min. typ. max. a 7.4 7.8 0.291 0.307 b 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 c 2.4 2.7 0.04 0.106 c1 1.2 0.047 d 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 f 3.8 0.150 h 2.54 0.100 f a h b d e3 e b1 c1 c b sot-82 mechanical data p032a STK2N80 8/10
dim. mm inch min. typ. max. min. typ. max. a 7.4 7.8 0.291 0.307 b 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 c 2.4 2.7 0.094 0.106 c1 1.2 0.047 c2 1.3 0.051 d 6 0.236 e 2.2 0.087 e3 4.4 0.173 f 3.8 0.150 h 2.54 0.100 p45 (typ.) s 4 0.157 s1 2 0.079 t 0.1 0.004 f a h b d e3 e b1 c2 c b p t c1 s s1 sot-194 mechanical data p032b STK2N80 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . STK2N80 10/10
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